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Kingston Technology ValueRAM KVR16N11/8 memory module 8 GB 1 x 8 GB DDR3 1600 MHz

Kingston Technology ValueRAM KVR16N11/8 memory module 8 GB 1 x 8 GB DDR3 740197.cdnh.asia

Quick Code: Q255148Part Code: KVR16N11/8Kingston
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Kingston Technology ValueRAM KVR16N11/8 memory module 8 GB 1 x 8 GB DDR3 1600 MHz

Kingston Technology ValueRAM KVR16N11/8 memory module 8 GB 1 x 8 GB DDR3 740197.cdnh.asia
Quick Code: Q255148Part Code: KVR16N11/8
  • 8 independent internal banks
  • 800MHz fCK for 1600Mb/sec/pin
  • 8-bit pre-fetch
  • Asynchronous Reset
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
  • Bi-directional Differential Data Strobe
  • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
  • JEDEC standard 1.5V Power Supply
  • On Die Termination using ODT pin
  • PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • Programmable CAS latency: 11, 10, 9, 8, 7, 6
  • VDDQ = 1.5V

Kingston Technology ValueRAM KVR16N11/8 memory module 8 GB 1 x 8 GB DDR3 1600 MHz

Kingston Technology ValueRAM KVR16N11/8 memory module 8 GB 1 x 8 GB DDR3 740197.cdnh.asia
Quick Code: Q255148Part Code: KVR16N11/8
Quick Code: Q255148Part Code: KVR16N11/8Kingston
Quick Code: Q255148
In Stock

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RRP £96.00 SAVE 59%
£32.49 ex. VAT
£38.99



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User Reviews
(2 customer reviews - 5 out of 5)
richard s very pleased no complaints - - 5 out of 5
Anton R Just works

 Product pros
Works out of the box on recent Fusion MBs all if which seem to support this format (unless crippled by manufacturer). - - 5 out of 5

Overview


Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.




At-a-glance


  • 8 independent internal banks

  • 800MHz fCK for 1600Mb/sec/pin

  • 8-bit pre-fetch

  • Asynchronous Reset

  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº

  • Bi-directional Differential Data Strobe

  • Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)

  • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)

  • JEDEC standard 1.5V Power Supply

  • On Die Termination using ODT pin

  • PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)

  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

  • Programmable CAS latency: 11, 10, 9, 8, 7, 6

  • VDDQ = 1.5V




Reasons to buy

  • 8 independent internal banks
  • 800MHz fCK for 1600Mb/sec/pin
  • 8-bit pre-fetch
  • Asynchronous Reset
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
  • Bi-directional Differential Data Strobe
  • Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
  • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
  • JEDEC standard 1.5V Power Supply
  • On Die Termination using ODT pin
  • PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • Programmable CAS latency: 11, 10, 9, 8, 7, 6
  • VDDQ = 1.5V

Specification

Technical Description: Kingston Technology ValueRAM KVR16N11/8 memory module 8 GB 1 x 8 GB DDR3 1600 MHz

Features
Lead plating:
Gold
Country of origin:Country where the device is made.
Taiwan
Memory type:Type of memory in the device e.g. DDR3, SRAM (Static RAM).
PC-12800
Module configuration:
1024M x 64
Memory voltage:The voltage (V) of the memory in the device.
1.5 V
Memory bus:Hardware and software that connects the main memory to the memory controller in computer systems. Originally, general-purpose buses like VMEbus and the S-100 bus were used, but to reduce latency, modern memory buses are designed to connect directly to DRAM chips, and thus are designed by chip standards bodies such as JEDEC.
64 bit
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
11
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
No
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
240-pin DIMM
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
1600 MHz
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR3
Memory layout (modules x size):
1 x 8 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
8 GB
Buffered memory type:
Unregistered (unbuffered)

General
Type:Characteristics of the device.
Memory RAM

Logistics data
Harmonized System (HS) code:
84733020

Other features
Bus clock rate:
1600 MHz
Error indication:
No
Internal memory:The amount of memory, usually measured in bytes (e.g. MB, GB), which is installed in the system's hardware.
8192 MB
Memory layout:Describes how memory is plugged on the motherboard
1 x 8192 MB
Number of pins:
240
Chips organisation:
X8

Packaging data
Package type:The type of product package e.g. box.
DIMM

Weight & dimensions
Width:The measurement or extent of something from side to side.
133.3 mm

Delivery Options

3 Working Days £4.95
Next Working Day £7.95
More delivery info

Product details

KVR16N11/8 Kingston 0740617206937 B0089JIDLC 591568

Kingston Technology ValueRAM KVR16N11/8 memory module 8 GB 1 x 8 GB DDR3 1600 MHz

£38.99 and In stock

SKU: KVR16N11/8

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